| PART |
Description |
Maker |
| GS816273CC-250I GS816273CGC-333I GS816273CC-333 GS |
256K x 72 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS816272CC-333 GS816272CC-150 GS816272CC-150I GS81 |
256K x 72 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| GS816272C-166I GS816272C-133I GS816218D-150 GS8162 |
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 256K X 72 CACHE SRAM, 7 ns, PBGA209
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 256K X 72 CACHE SRAM, 8.5 ns, PBGA209
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 6 ns, PBGA165
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 6.5 ns, PBGA165
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 5.5 ns, PBGA165
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 8.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS88237BB-V GS88237BGB-200V GS88237BB-250IV GS8823 |
256K x 36 9Mb SCD/DCD Sync Burst SRAM
|
GSI[GSI Technology]
|
| GS88237BGB-333I GS88237BB-200I |
256K x 36 9Mb SCD/DCD Sync Burst SRAM 256K X 36 CACHE SRAM, 2 ns, PBGA119
256K x 36 9Mb SCD/DCD Sync Burst SRAM 256K X 36 CACHE SRAM, 2.7 ns, PBGA119
|
GSI Technology, Inc.
|
| GS816272C GS816272C-200I GS816272C-133 GS816272C-1 |
256K x 72 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| CY7C1328F-100AC CY7C1328F-100AI CY7C1328F-133AC CY |
256K X 18 CACHE SRAM, 2.8 ns, PQFP100
4-Mb (256K x 18) Pipelined DCD Sync SRAM
|
CYPRESS SEMICONDUCTOR CORP
|
| GS88218BGB-200V GS88236BB-250IV |
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 6.5 ns, PBGA119
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 256K X 36 CACHE SRAM, 5.5 ns, PBGA119
|
GSI Technology, Inc.
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| GS88236BD-333I GS88218 GS88218BB-150 GS88218BB-150 |
9Mb Burst SRAMs
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
|
